Alliance Memory, Inc. Memory AS4C32M16D1-5BCNTR

Description
IC DRAM 512MBIT PARALLEL 60BGA
Datasheet
Description
IC DRAM 512MBIT PARALLEL 60BGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 512MBIT PARALLEL 60BGA

IC DRAM 512MBIT PARALLEL 60BGA

Supplier's Site Datasheet
Memory - AS4C32M16D1-5BCNTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-BGA

SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-BGA

Buy Now Datasheet
DDR SDRAM,512M,32M x 16,2.5V,60ball BGA - AS4C32M16D1-5BCNTR - Karl Kruse GmbH & Co. KG
Kaarst, Germany
DDR SDRAM,512M,32M x 16,2.5V,60ball BGA
AS4C32M16D1-5BCNTR
DDR SDRAM,512M,32M x 16,2.5V,60ball BGA AS4C32M16D1-5BCNTR
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C32M16D1-5BCNTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C32M16D1-5BCNTR
Integrated Circuits (ICs) - Memory AS4C32M16D1-5BCNTR
IC DRAM 512MBIT PARALLEL 60BGA

IC DRAM 512MBIT PARALLEL 60BGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Karl Kruse GmbH & Co. KG Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS4C32M16D1-5BCNTR AS4C32M16D1-5BCNTR AS4C32M16D1-5BCNTR AS4C32M16D1-5BCNTR
Product Name Memory Memory DDR SDRAM,512M,32M x 16,2.5V,60ball BGA Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip DRAM Chip Volatile; DRAM Chip
Access Time 0.7000 ns 0.7000 ns 0.7000 ns
Density 512000 kbits 512000 kbits 512000 kbits
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 774-JBP28S42MJ - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category PROM
Access Time 70 ns
Operating Temperature -55 C (-67 F)
View Details
4 suppliers
Memory - 28276183 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - 28C64A-35B/XA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Density 64 kbits
View Details
SDRAM - 2420773 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details