Alliance Memory, Inc. Memory AS4C32M16D1-5BCN

Description
SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 200MHz 700ps 60-BGA
Request a Quote Datasheet
Description
SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 200MHz 700ps 60-BGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 1450-1122-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 200MHz 700ps 60-BGA

SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 200MHz 700ps 60-BGA

Buy Now Datasheet
Memory IC and Storage Component - 774-AS4C32M16D1-5BCN - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-AS4C32M16D1-5BCN
Memory IC and Storage Component 774-AS4C32M16D1-5BCN
IC DRAM 512MBIT PARALLEL 60BGA Product overview: AS4C32M16D1-5BCN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C32M16D1-5BCN can be used for catalog matching and distributor lookup.

IC DRAM 512MBIT PARALLEL 60BGA Product overview: AS4C32M16D1-5BCN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C32M16D1-5BCN can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - SDRAM - AS4C32M16D1-5BCN - 803122-AS4C32M16D1-5BCN - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - AS4C32M16D1-5BCN
803122-AS4C32M16D1-5BCN
Memory - SDRAM - AS4C32M16D1-5BCN 803122-AS4C32M16D1-5BCN
Manufacturer: Alliance Memory, Inc. Win Source Part Number: 803122-AS4C32M16D1-5 BCN Packaging: Tray Mounting Style: SMD Technology: SDRAM - DDR Memory Type: Volatile Memory Size: 512Mb (32M x 16) Access Time: 700ps Supplier Device Package: 60-BGA Temperature Range - Operating: 0°C ~ 70°C Memory Format: DRAM Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-TFBGA Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 240 MSL Level: 3 (168 Hours) Supply Voltage (V): 2.3V ~ 2.7V

Manufacturer: Alliance Memory, Inc.
Win Source Part Number: 803122-AS4C32M16D1-5BCN
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR
Memory Type: Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 700ps
Supplier Device Package: 60-BGA
Temperature Range - Operating: 0°C ~ 70°C
Memory Format: DRAM
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 240
MSL Level: 3 (168 Hours)
Supply Voltage (V): 2.3V ~ 2.7V

Buy Now
IC DRAM 512MBIT PARALLEL 60BGA

IC DRAM 512MBIT PARALLEL 60BGA

Supplier's Site Datasheet
DDR SDRAM,512M,32M x 16,2.5V,60ball BGA - AS4C32M16D1-5BCN - Karl Kruse GmbH & Co. KG
Kaarst, Germany
DDR SDRAM,512M,32M x 16,2.5V,60ball BGA
AS4C32M16D1-5BCN
DDR SDRAM,512M,32M x 16,2.5V,60ball BGA AS4C32M16D1-5BCN
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
Memory - AS4C32M16D1-5BCN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-BGA

SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-BGA

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AS4C32M16D1-5BCN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C32M16D1-5BCN
Integrated Circuits (ICs) - Memory AS4C32M16D1-5BCN
IC DRAM 512MBIT PARALLEL 60BGA

IC DRAM 512MBIT PARALLEL 60BGA

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Lingto Electronic Limited Karl Kruse GmbH & Co. KG Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1450-1122-ND 774-AS4C32M16D1-5BCN 803122-AS4C32M16D1-5BCN AS4C32M16D1-5BCN AS4C32M16D1-5BCN AS4C32M16D1-5BCN AS4C32M16D1-5BCN
Product Name Memory Memory IC and Storage Component Memory - SDRAM - AS4C32M16D1-5BCN Memory DDR SDRAM,512M,32M x 16,2.5V,60ball BGA Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 60-TFBGA BGA; Tray 60ball BGA BGA; 60-TFBGA BGA
Supply Voltage 2.3V ~ 2.7V 2.3V ~ 2.7V 2.3V ~ 2.7V 2.3V ~ 2.7V 2.3V ~ 2.7V
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