Manufacturer: Alliance Memory, Inc.
Win Source Part Number: 803122-AS4C32M16D1-5
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR
Memory Type: Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 700ps
Supplier Device Package: 60-BGA
Temperature Range - Operating: 0°C ~ 70°C
Memory Format: DRAM
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 240
MSL Level: 3 (168 Hours)
Supply Voltage (V): 2.3V ~ 2.7V
IC DRAM 512MBIT PARALLEL 60BGA Product overview: AS4C32M16D1-5BCN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C32M16D1-5BCN
IC DRAM 512MBIT PARALLEL 60BGA
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-BGA
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IC DRAM 512MBIT PARALLEL 60BGA
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | Quarktwin Technology Ltd. | Karl Kruse GmbH & Co. KG | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 803122-AS4C32M16D1-5BCN | 774-AS4C32M16D1-5BCN | AS4C32M16D1-5BCN | AS4C32M16D1-5BCN | AS4C32M16D1-5BCN | AS4C32M16D1-5BCN |
| Product Name | Memory - SDRAM - AS4C32M16D1-5BCN | Memory IC and Storage Component | Memory | Memory | DDR SDRAM,512M,32M x 16,2.5V,60ball BGA | Integrated Circuits (ICs) - Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | Volatile; DRAM Chip |
| Access Time | 0.7000 ns | 0.7000 ns | 0.7000 ns | 0.7000 ns | 0.7000 ns | |
| Cycle Time | 15 ns | 15 ns | ||||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Supply Voltage | 2.3V ~ 2.7V | 2.3V ~ 2.7V | 2.3V ~ 2.7V | 2.3V ~ 2.7V |
