Alliance Memory, Inc. Memory AS4C256M8D3LC-12BAN

Description
2G - C DIE 256M X 8 1.35V AUTOMO
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Description
2G - C DIE 256M X 8 1.35V AUTOMO
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2G - C DIE 256M X 8 1.35V AUTOMO

2G - C DIE 256M X 8 1.35V AUTOMO

Supplier's Site Datasheet
Memory - AS4C256M8D3LC-12BAN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 20 ns 78-FBGA (7.5x10.5)

SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 20 ns 78-FBGA (7.5x10.5)

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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS4C256M8D3LC-12BAN
Integrated Circuits (ICs) - Memory - Memory AS4C256M8D3LC-12BAN
IC DRAM 2GBIT PARALLEL 78FBGA

IC DRAM 2GBIT PARALLEL 78FBGA

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C256M8D3LC-12BAN AS4C256M8D3LC-12BAN AS4C256M8D3LC-12BAN
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SDRAM - DDR3L DRAM; DRAM Chip Volatile; DRAM Chip
Data Rate 800 MHz 800 MHz
Access Time 20 ns 20 ns
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
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