Alliance Memory, Inc. Memory AS4C256M8D3LC-12BAN

Description
2G - C DIE 256M X 8 1.35V AUTOMO
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Description
2G - C DIE 256M X 8 1.35V AUTOMO
Request a Quote Datasheet

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Product
Description
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2G - C DIE 256M X 8 1.35V AUTOMO

2G - C DIE 256M X 8 1.35V AUTOMO

Supplier's Site Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS4C256M8D3LC-12BAN
Integrated Circuits (ICs) - Memory - Memory AS4C256M8D3LC-12BAN
IC DRAM 2GBIT PARALLEL 78FBGA

IC DRAM 2GBIT PARALLEL 78FBGA

Supplier's Site
Memory - AS4C256M8D3LC-12BAN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 20 ns 78-FBGA (7.5x10.5)

SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 20 ns 78-FBGA (7.5x10.5)

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Technical Specifications

  ODG (Origin Data Global) Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C256M8D3LC-12BAN AS4C256M8D3LC-12BAN AS4C256M8D3LC-12BAN
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SDRAM - DDR3L Volatile; DRAM Chip DRAM; DRAM Chip
Data Rate 800 MHz 800 MHz
Access Time 20 ns 20 ns
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
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