The AS4C256M8D2-25BCN is a 2Gb DDR2 SDRAM memory chip organized as 8 banks of 32Mbit x 8. It supports high-speed data transfer rates with a system frequency of up to 400 MHz and features a 4-bit prefetch architecture. The device offers programmable CAS latency options of 3, 4, 5, 6, and 7, as well as programmable additive latency and burst lengths of 4 and 8. This memory chip includes on-die termination (ODT), automatic and controlled precharge commands, and supports power-down mode, auto refresh, and self-refresh capabilities. The refresh interval is 7.8 ¬µs at temperatures from -40¬8C to 85¬8C and 3.9 ¬µs at temperatures from 85¬8C to 105¬8C. The AS4C256M8D2-25BCN operates with a power supply of 1.8V ¬± 0.1V and is available in a 60-ball FBGA package, making it suitable for various applications requiring reliable and efficient memory solutions.
IC DRAM 2GBIT PARALLEL 60FBGA
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.
IC DRAM 2GBIT PARALLEL 60FBGA
SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 57.5 ns 60-FBGA (8x10)
| Lingto Electronic Limited | Karl Kruse GmbH & Co. KG | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | AS4C256M8D2-25BCN | AS4C256M8D2-25BCN | AS4C256M8D2-25BCN | AS4C256M8D2-25BCN |
| Product Name | Memory | DDR2 SDRAM,2G ,256M x 8,1.8V,60ball FBGA | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 57.5 ns | 57.5 ns | 57.5 ns | |
| Density | 2000000 kbits | 2000000 kbits | 2000000 kbits | |
| Package Type | 60ball FBGA | BGA | BGA; 60-TFBGA |
