The AS4C256M8D2-25BCN is a 2Gb DDR2 SDRAM memory chip organized as 8 banks of 32Mbit x 8. It supports high-speed data transfer rates with a system frequency of up to 400 MHz and features a 4-bit prefetch architecture. The device offers programmable CAS latency options of 3, 4, 5, 6, and 7, as well as programmable additive latency and burst lengths of 4 and 8. This memory chip includes on-die termination (ODT), automatic and controlled precharge commands, and supports power-down mode, auto refresh, and self-refresh capabilities. The refresh interval is 7.8 ¬µs at temperatures from -40¬8C to 85¬8C and 3.9 ¬µs at temperatures from 85¬8C to 105¬8C. The AS4C256M8D2-25BCN operates with a power supply of 1.8V ¬± 0.1V and is available in a 60-ball FBGA package, making it suitable for various applications requiring reliable and efficient memory solutions.
IC DRAM 2GBIT PARALLEL 60FBGA
SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 57.5 ns 60-FBGA (8x10)
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IC DRAM 2GBIT PARALLEL 60FBGA
| Lingto Electronic Limited | Quarktwin Technology Ltd. | Karl Kruse GmbH & Co. KG | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | AS4C256M8D2-25BCN | AS4C256M8D2-25BCN | AS4C256M8D2-25BCN | AS4C256M8D2-25BCN |
| Product Name | Memory | Memory | DDR2 SDRAM,2G ,256M x 8,1.8V,60ball FBGA | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | Volatile; DRAM Chip |
| Access Time | 57.5 ns | 57.5 ns | 57.5 ns | |
| Density | 2000000 kbits | 2000000 kbits | 2000000 kbits | |
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) |
