IC DRAM 4GBIT PARALLEL 96FBGA
IC DRAM 4GBIT PARALLEL 96FBGA Product overview: AS4C256M16D3LC-12BIN
IC DRAM 4GBIT PARALLEL 96FBGA
SDRAM - DDR3L Memory IC 4Gbit Parallel 800 MHz 20 ns 96-FBGA (7.5x13.5)
IC DRAM 4GBIT PARALLEL 96FBGA
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | AS4C256M16D3LC-12BINTR | 774-AS4C256M16D3LC-12BINTR | AS4C256M16D3LC-12BINTR | AS4C256M16D3LC-12BINTR | AS4C256M16D3LC-12BINTR |
| Product Name | Memory | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | SDRAM - DDR3L; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Data Rate | 800 MHz | 800 MHz | |||
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns | 20 ns |
| Operating Temperature | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | |
| Density | 4000000 kbits | 4000000 kbits | 4000000 kbits | 4000000 kbits |