IC DRAM 4GBIT PARALLEL 96FBGA Product overview: AS4C256M16D3L-12BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C256M16D3L-12
Win Source Part Number: 1356030-AS4C256M16D3
Category: Integrated Circuits (ICs) - Memory - Memory
Temperature Range - Operating: -40°C ~ 95°C (TC)
Fake Threat In the Open Market: 37 pct.
MSL Level: 3 (168 Hours)
Mfr: Alliance Memory, Inc.
Package: Tray
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (9x13)
Base Product Number: AS4C256
Technology: SDRAM - DDR3L
Mounting Type: Surface Mount
HTSUS: 8542.32.0036
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - Supply: 1.283V ~ 1.45V
Memory Format: DRAM
Memory Size: 4Gbit
Memory Organization: 256M x 16
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Memory Type: Volatile
IC DRAM 4GBIT PARALLEL 96FBGA
IC DRAM 4GBIT PARALLEL 96FBGA
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.
SDRAM - DDR3L Memory IC 4Gbit Parallel 800 MHz 20 ns 96-FBGA (9x13)
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Karl Kruse GmbH & Co. KG | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-AS4C256M16D3L-12BIN | 1356030-AS4C256M16D3L-12BIN | AS4C256M16D3L-12BIN | AS4C256M16D3L-12BIN | AS4C256M16D3L-12BIN | AS4C256M16D3L-12BIN |
| Product Name | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Memory | Integrated Circuits (ICs) - Memory | DDR3 SDRAM,4G,256M x 161.35V,96-ball FBGA | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns | 20 ns | |
| Cycle Time | 15 ns | 15 ns | ||||
| Operating Temperature | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) |
