Win Source Part Number: 1154969-AS4C256M16D3
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 209
Mounting: SMD (SMT)
Technology: SDRAM - DDR3
Memory Type: Volatile
Memory Size: 4Gb (256M x 16)
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13.5)
Temperature Range - Operating: 0°C ~ 95°C (TC)
Memory Format: DRAM
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Alternative Parts (Cross-Reference): AS4C256M16D3C12BCN;
ECCN: EAR99
Fake Threat In the Open Market: 71 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036
Mfr: Alliance Memory, Inc.
Other Names: 1450-AS4C256M16D3C-1
Base Product Number: AS4C256
IC DRAM 4GBIT PARALLEL 96FBGA Product overview: AS4C256M16D3C-12BCN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C256M16D3C-12
SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 800MHz 20ns 96-FBGA (7.5x13.5)
SDRAM - DDR3 Memory IC 4Gbit Parallel 800 MHz 20 ns 96-FBGA (7.5x13.5)
IC DRAM 4GBIT PARALLEL 96FBGA
IC DRAM 4GBIT PARALLEL 96FBGA
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 1154969-AS4C256M16D3C-12BCN | 774-AS4C256M16D3C-12BCN | 1450-AS4C256M16D3C-12BCN-ND | AS4C256M16D3C-12BCN | AS4C256M16D3C-12BCN | AS4C256M16D3C-12BCN |
| Product Name | Integrated Circuits (ICs) - Memory | Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns | 20 ns | |
| Cycle Time | 15 ns | 15 ns | ||||
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | |
| Supply Voltage | 1.425V ~ 1.575V | 1.425V ~ 1.575V | 1.425V ~ 1.575V | 1.425V ~ 1.575V | 1.425V ~ 1.575V |
