Alliance Memory, Inc. Memory AS4C16M32MSA-6BINTR

Description
SDRAM - Mobile SDRAM Memory IC 512Mb (16M x 32) Parallel 166MHz 5.4ns 90-FBGA (8x13)
Request a Quote Datasheet
Description
SDRAM - Mobile SDRAM Memory IC 512Mb (16M x 32) Parallel 166MHz 5.4ns 90-FBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C16M32MSA-6BINTR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile SDRAM Memory IC 512Mb (16M x 32) Parallel 166MHz 5.4ns 90-FBGA (8x13)

SDRAM - Mobile SDRAM Memory IC 512Mb (16M x 32) Parallel 166MHz 5.4ns 90-FBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AS4C16M32MSA-6BINTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C16M32MSA-6BINTR
Integrated Circuits (ICs) - Memory AS4C16M32MSA-6BINTR
IC DRAM 512MBIT PARALLEL 90FBGA

IC DRAM 512MBIT PARALLEL 90FBGA

Supplier's Site
IC DRAM 512MBIT PARALLEL 90FBGA

IC DRAM 512MBIT PARALLEL 90FBGA

Supplier's Site Datasheet
Memory - AS4C16M32MSA-6BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile SDRAM Memory IC 512Mbit Parallel 166 MHz 5.4 ns 90-FBGA (8x13)

SDRAM - Mobile SDRAM Memory IC 512Mbit Parallel 166 MHz 5.4 ns 90-FBGA (8x13)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS4C16M32MSA-6BINTR-ND AS4C16M32MSA-6BINTR AS4C16M32MSA-6BINTR AS4C16M32MSA-6BINTR
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 90-VFBGA BGA BGA; 90-VFBGA
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