Alliance Memory, Inc. Integrated Circuits (ICs) - Memory - Memory AS4C16M16SB-6BINTR

Description
MEMORY
Datasheet
Description
MEMORY
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS4C16M16SB-6BINTR
Integrated Circuits (ICs) - Memory - Memory AS4C16M16SB-6BINTR
MEMORY

MEMORY

Supplier's Site
Memory - AS4C16M16SB-6BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 256Mbit LVTTL 166 MHz 5 ns 54-TFBGA (8x8)

SDRAM Memory IC 256Mbit LVTTL 166 MHz 5 ns 54-TFBGA (8x8)

Buy Now Datasheet

Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number AS4C16M16SB-6BINTR AS4C16M16SB-6BINTR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip
Data Rate 166 MHz
Cycle Time 12 ns
Density 256000 kbits 256000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71024S20TYI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 1000 kbits
View Details
Memory - AS4C1024 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Logic - Logic - FIFOs Memory - CD54HCT40105F3A - 1160037-CD54HCT40105F3A - Win Source Electronics
Specs
Memory Category FIFO
View Details
2 suppliers
SDRAM - 2420768P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Operating Temperature -40 C (-40 F)
View Details