IC DRAM 256MBIT PARALLEL 54TFBGA
Manufacturer: Alliance Memory, Inc.
Win Source Part Number: 1147411-AS4C16M16SA-
Manufacturer Homepage: www.alsc.com
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
IC DRAM 256MBIT PAR 54TFBGA Product overview: AS4C16M16SA-7BCN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C16M16SA-7BCN
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IC DRAM 256MBIT PARALLEL 54TFBGA
SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 54-TFBGA (8x8)
IC DRAM 256MBIT PARALLEL 54TFBGA
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Karl Kruse GmbH & Co. KG | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | AS4C16M16SA-7BCN | 1147411-AS4C16M16SA-7BCN | 774-AS4C16M16SA-7BCN | AS4C16M16SA-7BCN | AS4C16M16SA-7BCN | AS4C16M16SA-7BCN | AS4C16M16SA-7BCN |
| Product Name | Memory | Memory - AS4C16M16SA-7BCN | Memory IC and Storage Component | SDRAM,256M,3.3V,143Mhz,16M x 16,54ball FBGA | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | SDRAM; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Data Rate | 143 MHz | 143 MHz | |||||
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | ||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | |||
| Density | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits |
