IC DRAM 256MBIT PARALLEL 54TFBGA
IC DRAM 256MBIT PAR 54TFBGA Product overview: AS4C16M16SA-6BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C16M16SA-6BIN
ALLIANCE, DRAM, 256M, 16MX16, 3.3V
IC DRAM 256MBIT PARALLEL 54TFBGA
IC DRAM 256M PARALLEL 54TFBGA
SDRAM Memory IC 256Mbit Parallel 166 MHz 5 ns 54-TFBGA (8x8)
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.
IC DRAM 256MBIT PARALLEL 54TFBGA
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Lingto Electronic Limited | Utmel Electronic Limited | Quarktwin Technology Ltd. | Karl Kruse GmbH & Co. KG | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | AS4C16M16SA-6BIN | 774-AS4C16M16SA-6BIN | 2308412P | AS4C16M16SA-6BIN | 28-AS4C16M16SA-6BIN | AS4C16M16SA-6BIN | AS4C16M16SA-6BIN | AS4C16M16SA-6BIN |
| Product Name | Memory | Memory IC and Storage Component | SDRAM | Memory | IC DRAM 256M PARALLEL 54TFBGA | Memory | SDRAM,256M,3.3V,166Mhz,16M x 16,54ball FBGA | Integrated Circuits (ICs) - Memory |
| Memory Category | SDRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | Volatile; DRAM Chip |
| Data Rate | 166 MHz | 166 MHz | ||||||
| Access Time | 5 ns | 5 ns | 5 ns | 5 ns | 5 ns | 5 ns | 5 ns | |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Density | 256000 kbits | 2048000 kbits | 256000 kbits | 268435 kbits | 256000 kbits | 256000 kbits |
