SDRAM Memory IC 256Mb (16M x 16) Parallel 166MHz 5ns 54-TFBGA (8x8)
IC DRAM 256MBIT PAR 54TFBGA Product overview: AS4C16M16SA-6BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C16M16SA-6BIN
ALLIANCE, DRAM, 256M, 16MX16, 3.3V
IC DRAM 256MBIT PARALLEL 54TFBGA
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SDRAM Memory IC 256Mbit Parallel 166 MHz 5 ns 54-TFBGA (8x8)
IC DRAM 256MBIT PARALLEL 54TFBGA
IC DRAM 256M PARALLEL 54TFBGA
IC DRAM 256MBIT PARALLEL 54TFBGA
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Lingto Electronic Limited | Karl Kruse GmbH & Co. KG | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 1450-1250-ND | 774-AS4C16M16SA-6BIN | 2308412P | AS4C16M16SA-6BIN | AS4C16M16SA-6BIN | AS4C16M16SA-6BIN | AS4C16M16SA-6BIN | 28-AS4C16M16SA-6BIN | AS4C16M16SA-6BIN |
| Product Name | Memory | Memory IC and Storage Component | SDRAM | Memory | SDRAM,256M,3.3V,166Mhz,16M x 16,54ball FBGA | Memory | Integrated Circuits (ICs) - Memory | IC DRAM 256M PARALLEL 54TFBGA | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | SDRAM; DRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Density | 256000 kbits | 2048000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | 268435 kbits | 256000 kbits | ||
| Package Type | 54-TFBGA | BGA; Tray | 54ball FBGA | BGA; 54-TFBGA | BGA | 54-TFBGA | 54-TFBGA | ||
| Supply Voltage | 3V ~ 3.6V | 3.6V; 3V ~ 3.6V | 3.6V; 3V ~ 3.6V | 3.6V; 3V ~ 3.6V | -3.3V; 3V; 3.3V | 3V ~ 3.6V |
