Alliance Memory, Inc. Memory AS4C16M16S-7BCNTR

Description
IC DRAM 256MBIT PARALLEL 54TFBGA
Datasheet
Description
IC DRAM 256MBIT PARALLEL 54TFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 256MBIT PARALLEL 54TFBGA

IC DRAM 256MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Memory - AS4C16M16S-7BCNTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 54-TFBGA (8x8)

SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 54-TFBGA (8x8)

Buy Now Datasheet
SDRAM,256M,3.3V,143Mhz,16M x 16,54ball FBGA - AS4C16M16S-7BCNTR - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SDRAM,256M,3.3V,143Mhz,16M x 16,54ball FBGA
AS4C16M16S-7BCNTR
SDRAM,256M,3.3V,143Mhz,16M x 16,54ball FBGA AS4C16M16S-7BCNTR
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - AS4C16M16S-7BCNTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AS4C16M16S-7BCNTR
Integrated Circuits (ICs) - Memory - Memory AS4C16M16S-7BCNTR
IC DRAM 256MBIT PAR 54TFBGA

IC DRAM 256MBIT PAR 54TFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Karl Kruse GmbH & Co. KG Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS4C16M16S-7BCNTR AS4C16M16S-7BCNTR AS4C16M16S-7BCNTR AS4C16M16S-7BCNTR
Product Name Memory Memory SDRAM,256M,3.3V,143Mhz,16M x 16,54ball FBGA Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip DRAM Chip Volatile; DRAM Chip
Access Time 5.4 ns 5.4 ns
Density 256000 kbits 256000 kbits 256000 kbits
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 16-2948-02-T - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - MT4C1004J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882657 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - 27C512-12/L093 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 120 ns
Density 512 kbits
View Details