Manufacturer: Alliance Memory, Inc.
Win Source Part Number: 807318-AS4C16M16S-6B
Packaging: Reel
Mounting Style: SMD
Technology: SDRAM
Memory Type: Volatile
Memory Size: 256Mb (16M x 16)
Access Time: 5.4ns
Part Status: Obsolete (End Of Life)
Supplier Device Package: 54-TFBGA (8x8)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: DRAM
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Manufacturer Package: 54-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 77 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 3 (168 Hours)
Supply Voltage (V): 3V ~ 3.6V
IC DRAM 256MBIT PAR 54TFBGA Product overview: AS4C16M16S-6BINTR from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C16M16S-6BINT
SDRAM Memory IC 256Mbit Parallel 166 MHz 5.4 ns 54-TFBGA (8x8)
IC DRAM 256MBIT PARALLEL 54TFBGA
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.
IC DRAM 256MBIT PARALLEL 54TFBGA
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Karl Kruse GmbH & Co. KG | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 807318-AS4C16M16S-6BINTR | 774-AS4C16M16S-6BINTR | AS4C16M16S-6BINTR | AS4C16M16S-6BINTR | AS4C16M16S-6BINTR | AS4C16M16S-6BINTR |
| Product Name | Memory - SDRAM - AS4C16M16S-6BINTR | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory | SDRAM,256M,3.3V,166Mhz,16M x 16,54ball FBGA | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | |
| Cycle Time | 12 ns | 12 ns | ||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
