Alliance Memory, Inc. Memory AS4C16M16S-6BIN

Description
SDRAM Memory IC 256Mbit Parallel 166 MHz 5.4 ns 54-TFBGA (8x8)
Datasheet
Description
SDRAM Memory IC 256Mbit Parallel 166 MHz 5.4 ns 54-TFBGA (8x8)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C16M16S-6BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 256Mbit Parallel 166 MHz 5.4 ns 54-TFBGA (8x8)

SDRAM Memory IC 256Mbit Parallel 166 MHz 5.4 ns 54-TFBGA (8x8)

Buy Now Datasheet
SDRAM,256M,3.3V,166Mhz,16M x 16,54ball FBGA - AS4C16M16S-6BIN - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SDRAM,256M,3.3V,166Mhz,16M x 16,54ball FBGA
AS4C16M16S-6BIN
SDRAM,256M,3.3V,166Mhz,16M x 16,54ball FBGA AS4C16M16S-6BIN
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
IC DRAM 256MBIT PARALLEL 54TFBGA

IC DRAM 256MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C16M16S-6BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C16M16S-6BIN
Integrated Circuits (ICs) - Memory AS4C16M16S-6BIN
IC DRAM 256MBIT PARALLEL 54TFBGA

IC DRAM 256MBIT PARALLEL 54TFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Karl Kruse GmbH & Co. KG Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS4C16M16S-6BIN AS4C16M16S-6BIN AS4C16M16S-6BIN AS4C16M16S-6BIN
Product Name Memory SDRAM,256M,3.3V,166Mhz,16M x 16,54ball FBGA Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 5.4 ns 5.4 ns 5.4 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits
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