Alliance Memory, Inc. Memory AS4C16M16MSA-6BINTR

Description
SDRAM - Mobile SDRAM Memory IC 256Mb (16M x 16) Parallel 166MHz 5.5ns 54-FBGA (8x8)
Request a Quote Datasheet
Description
SDRAM - Mobile SDRAM Memory IC 256Mb (16M x 16) Parallel 166MHz 5.5ns 54-FBGA (8x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C16M16MSA-6BINTR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile SDRAM Memory IC 256Mb (16M x 16) Parallel 166MHz 5.5ns 54-FBGA (8x8)

SDRAM - Mobile SDRAM Memory IC 256Mb (16M x 16) Parallel 166MHz 5.5ns 54-FBGA (8x8)

Buy Now Datasheet
IC DRAM 256MBIT PARALLEL 54FBGA

IC DRAM 256MBIT PARALLEL 54FBGA

Supplier's Site Datasheet
Memory - AS4C16M16MSA-6BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile SDRAM Memory IC 256Mbit Parallel 166 MHz 5.5 ns 54-FBGA (8x8)

SDRAM - Mobile SDRAM Memory IC 256Mbit Parallel 166 MHz 5.5 ns 54-FBGA (8x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AS4C16M16MSA-6BINTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C16M16MSA-6BINTR
Integrated Circuits (ICs) - Memory AS4C16M16MSA-6BINTR
IC DRAM 256MBIT PARALLEL 54FBGA

IC DRAM 256MBIT PARALLEL 54FBGA

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS4C16M16MSA-6BINTR-ND AS4C16M16MSA-6BINTR AS4C16M16MSA-6BINTR AS4C16M16MSA-6BINTR
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Package Type 54-VFBGA BGA; 54-VFBGA BGA
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