Alliance Memory, Inc. Integrated Circuits (ICs) - Memory AS4C16M16MD1-6BCNTR

Description
Win Source Part Number: 969035-AS4C16M16MD1- 6BCNTR Category: Integrated Circuits (ICs)>Memory Package: Tape & Reel (TR) Standard Package: 1,000 Mounting: SMD (SMT) Technology: SDRAM - Mobile LPDDR Memory Type: Volatile Memory Size: 256Mb (16M x 16) Voltage - Supply: 1.7V ~ 1.95V Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x9) Temperature Range - Operating: -25°C ~ 85°C (TJ) Memory Format: DRAM Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0024 Mfr: Alliance Memory, Inc. Base Product Number: AS4C16
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Description
Win Source Part Number: 969035-AS4C16M16MD1- 6BCNTR Category: Integrated Circuits (ICs)>Memory Package: Tape & Reel (TR) Standard Package: 1,000 Mounting: SMD (SMT) Technology: SDRAM - Mobile LPDDR Memory Type: Volatile Memory Size: 256Mb (16M x 16) Voltage - Supply: 1.7V ~ 1.95V Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x9) Temperature Range - Operating: -25°C ~ 85°C (TJ) Memory Format: DRAM Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0024 Mfr: Alliance Memory, Inc. Base Product Number: AS4C16
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Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - 969035-AS4C16M16MD1-6BCNTR - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
969035-AS4C16M16MD1-6BCNTR
Integrated Circuits (ICs) - Memory 969035-AS4C16M16MD1-6BCNTR
Win Source Part Number: 969035-AS4C16M16MD1- 6BCNTR Category: Integrated Circuits (ICs)>Memory Package: Tape & Reel (TR) Standard Package: 1,000 Mounting: SMD (SMT) Technology: SDRAM - Mobile LPDDR Memory Type: Volatile Memory Size: 256Mb (16M x 16) Voltage - Supply: 1.7V ~ 1.95V Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x9) Temperature Range - Operating: -25°C ~ 85°C (TJ) Memory Format: DRAM Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0024 Mfr: Alliance Memory, Inc. Base Product Number: AS4C16

Win Source Part Number: 969035-AS4C16M16MD1-6BCNTR
Category: Integrated Circuits (ICs)>Memory
Package: Tape & Reel (TR)
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: SDRAM - Mobile LPDDR
Memory Type: Volatile
Memory Size: 256Mb (16M x 16)
Voltage - Supply: 1.7V ~ 1.95V
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x9)
Temperature Range - Operating: -25°C ~ 85°C (TJ)
Memory Format: DRAM
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0024
Mfr: Alliance Memory, Inc.
Base Product Number: AS4C16

Buy Now Datasheet
Memory - AS4C16M16MD1-6BCNTR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR Memory IC 256Mb (16M x 16) Parallel 166MHz 60-FBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 256Mb (16M x 16) Parallel 166MHz 60-FBGA (8x9)

Buy Now Datasheet
Mobile DDR SDRAM,256M,16M x 16,1.8V,60-ball FPBGA - AS4C16M16MD1-6BCNTR - Karl Kruse GmbH & Co. KG
Kaarst, Germany
Mobile DDR SDRAM,256M,16M x 16,1.8V,60-ball FPBGA
AS4C16M16MD1-6BCNTR
Mobile DDR SDRAM,256M,16M x 16,1.8V,60-ball FPBGA AS4C16M16MD1-6BCNTR
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
IC DRAM 256MBIT PARALLEL 60FPBGA

IC DRAM 256MBIT PARALLEL 60FPBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C16M16MD1-6BCNTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C16M16MD1-6BCNTR
Integrated Circuits (ICs) - Memory AS4C16M16MD1-6BCNTR
IC DRAM 256MBIT PARALLEL 60FPBGA

IC DRAM 256MBIT PARALLEL 60FPBGA

Supplier's Site
Memory - AS4C16M16MD1-6BCNTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 256Mbit Parallel 166 MHz 60-FBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 256Mbit Parallel 166 MHz 60-FBGA (8x9)

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Karl Kruse GmbH & Co. KG Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 969035-AS4C16M16MD1-6BCNTR AS4C16M16MD1-6BCNTR-ND AS4C16M16MD1-6BCNTR AS4C16M16MD1-6BCNTR AS4C16M16MD1-6BCNTR AS4C16M16MD1-6BCNTR
Product Name Integrated Circuits (ICs) - Memory Memory Mobile DDR SDRAM,256M,16M x 16,1.8V,60-ball FPBGA Memory Integrated Circuits (ICs) - Memory Memory
Memory Category Volatile; DRAM Chip DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Cycle Time 15 ns
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Supply Voltage 1.7V ~ 1.95V 1.7V ~ 1.95V 1.7V ~ 1.95V 1.7V ~ 1.95V
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