IC DRAM 256MBIT PAR 84TFBGA Product overview: AS4C16M16D2-25BCN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C16M16D2-25BC
IC DRAM 256MBIT PARALLEL 84TFBGA
IC DRAM 256MBIT PARALLEL 84TFBGA
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
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With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.
SDRAM - DDR2 Memory IC 256Mbit Parallel 400 MHz 400 ps 84-TFBGA (8x12.5)
| ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Karl Kruse GmbH & Co. KG | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-AS4C16M16D2-25BCN | AS4C16M16D2-25BCN | AS4C16M16D2-25BCN | AS4C16M16D2-25BCN | AS4C16M16D2-25BCN |
| Product Name | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory | Memory | DDR2 SDRAM,256M,16M x 16,1.8V,84ball FBGA | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | |
| Cycle Time | 15 ns | ||||
| Operating Temperature | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | ||
| Address Bus Width | 16 bits |
