Alliance Memory, Inc. Memory AS4C128M8D3B-12BCNTR

Description
IC DRAM 1GBIT PARALLEL 78FBGA
Datasheet
Description
IC DRAM 1GBIT PARALLEL 78FBGA
Datasheet

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Product
Description
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IC DRAM 1GBIT PARALLEL 78FBGA

IC DRAM 1GBIT PARALLEL 78FBGA

Supplier's Site Datasheet
Memory - AS4C128M8D3B-12BCNTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 20 ns 78-FBGA (8x10.5)

SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 20 ns 78-FBGA (8x10.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AS4C128M8D3B-12BCNTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C128M8D3B-12BCNTR
Integrated Circuits (ICs) - Memory AS4C128M8D3B-12BCNTR
IC DRAM 1GBIT PARALLEL 78FBGA

IC DRAM 1GBIT PARALLEL 78FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C128M8D3B-12BCNTR AS4C128M8D3B-12BCNTR AS4C128M8D3B-12BCNTR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 20 ns 20 ns 20 ns
Density 1000000 kbits 1000000 kbits 1000000 kbits
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
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