The AS4C128M8D3A-12BIN is a 1Gb DDR3 DRAM memory chip from Quarktwin Technology Ltd., designed for high-speed applications. It features a double data rate architecture, achieving clock speeds of up to 800 MHz with a CAS latency of 11. The device operates with a single power supply of 1.5V ± 0.075V and is compliant with JEDEC standards. It supports fully synchronous operation with differential clock inputs and includes eight internal banks for concurrent operations. The memory chip is suitable for industrial applications, with an operating temperature range of -40°C to 95°C. The package is a 78-ball FBGA, measuring 8 x 10.5 mm, and is RoHS compliant, ensuring it is free from lead and halogens. This product is ideal for engineers looking for reliable and efficient memory solutions in demanding environments.
SDRAM - DDR3 Memory IC 1Gb (128M x 8) Parallel 800MHz 20ns 78-FBGA (8x10.5)
IC DRAM 1GBIT PARALLEL 78FBGA
SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 20 ns 78-FBGA (8x10.5)
IC DRAM 1GBIT PARALLEL 78FBGA
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | AS4C128M8D3A-12BINTR-ND | AS4C128M8D3A-12BINTR | AS4C128M8D3A-12BINTR | AS4C128M8D3A-12BINTR |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | |
| Package Type | 78-VFBGA | BGA | BGA; 78-VFBGA | |
| Supply Voltage | 1.425V ~ 1.575V | 1.425V ~ 1.575V | 1.425V ~ 1.575V |
