Alliance Memory, Inc. Memory AS4C128M8D3A-12BANTR

Description
SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 20 ns 78-FBGA (8x10.5)
Datasheet
Description
SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 20 ns 78-FBGA (8x10.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C128M8D3A-12BANTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 20 ns 78-FBGA (8x10.5)

SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 20 ns 78-FBGA (8x10.5)

Buy Now Datasheet
IC DRAM 1GBIT PARALLEL 78FBGA

IC DRAM 1GBIT PARALLEL 78FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C128M8D3A-12BANTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C128M8D3A-12BANTR
Integrated Circuits (ICs) - Memory AS4C128M8D3A-12BANTR
IC DRAM 1GBIT PARALLEL 78FBGA

IC DRAM 1GBIT PARALLEL 78FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C128M8D3A-12BANTR AS4C128M8D3A-12BANTR AS4C128M8D3A-12BANTR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 20 ns 20 ns 20 ns
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Density 1000000 kbits 1000000 kbits 1000000 kbits
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