Alliance Memory, Inc. Memory AS4C128M8D2A-25BCNTR

Description
IC DRAM 1GBIT PARALLEL 60FBGA
Datasheet
Description
IC DRAM 1GBIT PARALLEL 60FBGA
Datasheet

Suppliers

Company
Product
Description
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IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Memory - AS4C128M8D2A-25BCNTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 60-FBGA (8x10)

SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 60-FBGA (8x10)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AS4C128M8D2A-25BCNTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C128M8D2A-25BCNTR
Integrated Circuits (ICs) - Memory AS4C128M8D2A-25BCNTR
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C128M8D2A-25BCNTR AS4C128M8D2A-25BCNTR AS4C128M8D2A-25BCNTR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.4000 ns 0.4000 ns 0.4000 ns
Density 1000000 kbits 1000000 kbits 1000000 kbits
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
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