IC DRAM 1GBIT PAR 66TSOP II Product overview: AS4C128M8D1-6TIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C128M8D1-6TIN
SDRAM - DDR Memory IC 1Gbit Parallel 166 MHz 700 ps 66-TSOP II
IC DRAM 1GBIT PARALLEL 66TSOP II
IC DRAM 1GBIT PARALLEL 66TSOP II
| ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-AS4C128M8D1-6TIN | AS4C128M8D1-6TIN | AS4C128M8D1-6TIN | AS4C128M8D1-6TIN |
| Product Name | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.7000 ns | 0.7000 ns | 0.7000 ns | 0.7000 ns |
| Cycle Time | 15 ns | |||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
