Alliance Memory, Inc. Memory AS4C128M16MD2A-25BCN

Description
IC DRAM 2GBIT PARALLEL 134FBGA
Datasheet
Description
IC DRAM 2GBIT PARALLEL 134FBGA
Datasheet

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Product
Description
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IC DRAM 2GBIT PARALLEL 134FBGA

IC DRAM 2GBIT PARALLEL 134FBGA

Supplier's Site Datasheet
Memory - AS4C128M16MD2A-25BCN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR2 Memory IC 2Gbit Parallel 400 MHz 134-FBGA (10x11.5)

SDRAM - Mobile LPDDR2 Memory IC 2Gbit Parallel 400 MHz 134-FBGA (10x11.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AS4C128M16MD2A-25BCN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C128M16MD2A-25BCN
Integrated Circuits (ICs) - Memory AS4C128M16MD2A-25BCN
IC DRAM 2GBIT PARALLEL 134FBGA

IC DRAM 2GBIT PARALLEL 134FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C128M16MD2A-25BCN AS4C128M16MD2A-25BCN AS4C128M16MD2A-25BCN
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Density 2000000 kbits 2000000 kbits 2000000 kbits
Operating Temperature -30 to 85 C (-22 to 185 F) -30 to 85 C (-22 to 185 F)
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