Alliance Memory, Inc. Memory AS4C128M16MD2A-25BCN

Description
SDRAM - Mobile LPDDR2 Memory IC 2Gbit Parallel 400 MHz 134-FBGA (10x11.5)
Datasheet
Description
SDRAM - Mobile LPDDR2 Memory IC 2Gbit Parallel 400 MHz 134-FBGA (10x11.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C128M16MD2A-25BCN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR2 Memory IC 2Gbit Parallel 400 MHz 134-FBGA (10x11.5)

SDRAM - Mobile LPDDR2 Memory IC 2Gbit Parallel 400 MHz 134-FBGA (10x11.5)

Buy Now Datasheet
IC DRAM 2GBIT PARALLEL 134FBGA

IC DRAM 2GBIT PARALLEL 134FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C128M16MD2A-25BCN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C128M16MD2A-25BCN
Integrated Circuits (ICs) - Memory AS4C128M16MD2A-25BCN
IC DRAM 2GBIT PARALLEL 134FBGA

IC DRAM 2GBIT PARALLEL 134FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C128M16MD2A-25BCN AS4C128M16MD2A-25BCN AS4C128M16MD2A-25BCN
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -30 to 85 C (-22 to 185 F) -30 to 85 C (-22 to 185 F)
Density 2000000 kbits 2000000 kbits 2000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS4SD16M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 128000 kbits
View Details
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F2122202VYC - 5962F2122202VYC - Infineon Technologies AG
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 512000 kbits
Package Type CG-FP-68
View Details
SDRAM - 1882660 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
Memory - 71256SA25Y - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 25 ns
Density 256 kbits
View Details