Alliance Memory, Inc. Memory AS4C128M16D3L-12BINTR

Description
SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 20 ns 96-FBGA (9x13)
  • Memory - AS4C128M16D3L-12BINTR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • DDR3 SDRAM,2G,128M x 161.35V,96-ball FBGA - AS4C128M16D3L-12BINTR - Karl Kruse GmbH & Co. KG
    Karl Kruse GmbH & Co. KG
  • Integrated Circuits (ICs) - Memory - AS4C128M16D3L-12BINTR - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Memory - AS4C128M16D3L-12BINTR - Lingto Electronic Limited
    Lingto Electronic Limited
Description
SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 20 ns 96-FBGA (9x13)
Datasheet
Datasheet Summary
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The AS4C128M16D3L-12BINTR is a 2Gb DDR3L Synchronous DRAM (SDRAM) from Quarktwin Technology Ltd., organized as 128M x 16 bits. It operates at a voltage of 1.35V and is backward compatible with 1.5V ±0.075V. This memory chip supports a fast clock rate of 800MHz and features a fully synchronous operation with differential clock inputs. It includes eight internal banks for concurrent operations and supports various programmable modes, including burst lengths of 4 and 8. The device is designed for a wide operating temperature range, suitable for both commercial (0 to 95°C) and industrial (-40 to 95°C) applications. It complies with JEDEC standards and includes features such as dynamic ODT, auto refresh, and self-refresh capabilities. The AS4C128M16D3L-12BINTR is packaged in a 96-ball FBGA format, measuring 9 x 13 x 1.2mm, and is RoHS compliant, making it a suitable choice for engineers looking for reliable memory solutions in their projects.

Datasheet Summary
Powered by GS/AI

The AS4C128M16D3L-12BINTR is a 2Gb DDR3L Synchronous DRAM (SDRAM) from Quarktwin Technology Ltd., organized as 128M x 16 bits. It operates at a voltage of 1.35V and is backward compatible with 1.5V ±0.075V. This memory chip supports a fast clock rate of 800MHz and features a fully synchronous operation with differential clock inputs. It includes eight internal banks for concurrent operations and supports various programmable modes, including burst lengths of 4 and 8. The device is designed for a wide operating temperature range, suitable for both commercial (0 to 95°C) and industrial (-40 to 95°C) applications. It complies with JEDEC standards and includes features such as dynamic ODT, auto refresh, and self-refresh capabilities. The AS4C128M16D3L-12BINTR is packaged in a 96-ball FBGA format, measuring 9 x 13 x 1.2mm, and is RoHS compliant, making it a suitable choice for engineers looking for reliable memory solutions in their projects.

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C128M16D3L-12BINTR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
AS4C128M16D3L-12BINTR
Memory AS4C128M16D3L-12BINTR
SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 20 ns 96-FBGA (9x13)

SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 20 ns 96-FBGA (9x13)

Buy Now Datasheet
DDR3 SDRAM,2G,128M x 161.35V,96-ball FBGA - AS4C128M16D3L-12BINTR - Karl Kruse GmbH & Co. KG
Karl Kruse GmbH & Co. KG
Kaarst, Germany
DDR3 SDRAM,2G,128M x 161.35V,96-ball FBGA
AS4C128M16D3L-12BINTR
DDR3 SDRAM,2G,128M x 161.35V,96-ball FBGA AS4C128M16D3L-12BINTR
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C128M16D3L-12BINTR - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C128M16D3L-12BINTR
Integrated Circuits (ICs) - Memory AS4C128M16D3L-12BINTR
IC DRAM 2GBIT PARALLEL 96FBGA

IC DRAM 2GBIT PARALLEL 96FBGA

Supplier's Site
Memory - AS4C128M16D3L-12BINTR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
AS4C128M16D3L-12BINTR
Memory AS4C128M16D3L-12BINTR
IC DRAM 2GBIT PARALLEL 96FBGA

IC DRAM 2GBIT PARALLEL 96FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Karl Kruse GmbH & Co. KG Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS4C128M16D3L-12BINTR AS4C128M16D3L-12BINTR AS4C128M16D3L-12BINTR AS4C128M16D3L-12BINTR
Product Name Memory DDR3 SDRAM,2G,128M x 161.35V,96-ball FBGA Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 20 ns 20 ns 20 ns
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Density 2000000 kbits 2000000 kbits 2000000 kbits
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