Alliance Memory, Inc. Memory AS1C8M16PL-70BINTR

Description
PSRAM (Pseudo SRAM) Memory IC 128Mbit Parallel 133 MHz 70 ns 49-FBGA (4x4)
Datasheet
Description
PSRAM (Pseudo SRAM) Memory IC 128Mbit Parallel 133 MHz 70 ns 49-FBGA (4x4)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS1C8M16PL-70BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
PSRAM (Pseudo SRAM) Memory IC 128Mbit Parallel 133 MHz 70 ns 49-FBGA (4x4)

PSRAM (Pseudo SRAM) Memory IC 128Mbit Parallel 133 MHz 70 ns 49-FBGA (4x4)

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS1C8M16PL-70BINTR
Integrated Circuits (ICs) - Memory - Memory AS1C8M16PL-70BINTR
MEMORY

MEMORY

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number AS1C8M16PL-70BINTR AS1C8M16PL-70BINTR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category PSRAM; SRAM Chip Volatile; SRAM Chip
Access Time 70 ns
Operating Temperature -30 to 85 C (-22 to 185 F)
Density 128000 kbits 128000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420777P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details
Memory - 24C02A-E/J - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 2 kbits
View Details
Memory IC and Storage Component - 774-CY10E474-4KCQ - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Package Type Bulk
View Details
Memory - MT4C4001J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details