Alliance Memory, Inc. Memory AS1C512K16PL-70BINTR

Description
PSRAM (Pseudo SRAM) Memory IC 8Mbit Parallel 70 ns 48-FBGA (6x7)
Datasheet
Description
PSRAM (Pseudo SRAM) Memory IC 8Mbit Parallel 70 ns 48-FBGA (6x7)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS1C512K16PL-70BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
PSRAM (Pseudo SRAM) Memory IC 8Mbit Parallel 70 ns 48-FBGA (6x7)

PSRAM (Pseudo SRAM) Memory IC 8Mbit Parallel 70 ns 48-FBGA (6x7)

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS1C512K16PL-70BINTR
Integrated Circuits (ICs) - Memory - Memory AS1C512K16PL-70BINTR
MEMORY

MEMORY

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number AS1C512K16PL-70BINTR AS1C512K16PL-70BINTR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category PSRAM; SRAM Chip Volatile; SRAM Chip
Access Time 70 ns
Operating Temperature -30 to 85 C (-22 to 185 F)
Density 8000 kbits 8000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

 - 27C512-75DC - Rochester Electronics
Rochester Electronics
Specs
Memory Category EPROM
Logic Family CMOS
Package Type DIP; CDIP28
View Details
4 suppliers
Memory - 16-3417-01-T - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
 - LP3913SQX-ADJ/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type HVQFN48
View Details
Memory - AS5LC512K8 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details