AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGMH022P10C

Description
100V 65A 250W 20mΩ@10V,10A 3V@250uA 1 Piece P-Channel TO-220C MOSFETs ROHS
  • Transistors - AGMH022P10C - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
100V 65A 250W 20mΩ@10V,10A 3V@250uA 1 Piece P-Channel TO-220C MOSFETs ROHS
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Transistors - AGMH022P10C - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGMH022P10C
Transistors AGMH022P10C
100V 65A 250W 20mΩ@10V,10A 3V@250uA 1 Piece P-Channel TO-220C MOSFETs ROHS

100V 65A 250W 20mΩ@10V,10A 3V@250uA 1 Piece P-Channel TO-220C MOSFETs ROHS

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
AGMH022P10C
Triode/MOS Tube/Transistor >> MOSFETs AGMH022P10C
100V 65A 250W 20mΩ@10V,10A 3V@250uA P Channel TO-220C MOSFETs ROHS

100V 65A 250W 20mΩ@10V,10A 3V@250uA P Channel TO-220C MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number AGMH022P10C AGMH022P10C
Product Name Transistors Triode/MOS Tube/Transistor >> MOSFETs
Polarity P-Channel
V(BR)DSS 100 volts
VGS(off) 3 volts
rDS(on) 0.0200 ohms
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