AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM420MD

Description
40V 23A 25W 18mΩ@10V,15A 1.7V@250uA 1 N-Channel + 1 P-Channel TO-252-4 MOSFETs ROHS
  • Transistors - AGM420MD - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
40V 23A 25W 18mΩ@10V,15A 1.7V@250uA 1 N-Channel + 1 P-Channel TO-252-4 MOSFETs ROHS
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistors - AGM420MD - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM420MD
Transistors AGM420MD
40V 23A 25W 18mΩ@10V,15A 1.7V@250uA 1 N-Channel + 1 P-Channel TO-252-4 MOSFETs ROHS

40V 23A 25W 18mΩ@10V,15A 1.7V@250uA 1 N-Channel + 1 P-Channel TO-252-4 MOSFETs ROHS

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
AGM420MD
Triode/MOS Tube/Transistor >> MOSFETs AGM420MD
40V 20A 25W 18mΩ@10V,25A 1.7V@250uA 1PCSN-Channel&1PCSP- Channel TO-252-4 MOSFETs ROHS

40V 20A 25W 18mΩ@10V,25A 1.7V@250uA 1PCSN-Channel&1PCSP-Channel TO-252-4 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number AGM420MD AGM420MD
Product Name Transistors Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel
V(BR)DSS 40 volts
VGS(off) 1.7 volts
rDS(on) 0.0180 ohms
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ645-TL-E - 855356-2SJ645-TL-E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ645-TL-E
2SJ645-TL-E
Specs
Package Type SOT3
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMCQ120R120M1T - AIMCQ120R120M1T - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMCQ120R120M1T
AIMCQ120R120M1T
Specs
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
TJ -55 to 175 C (-67 to 347 F)
View Details
CSD23203W CSD23203W 8 V P-Channel NexFET? Power MOSFET - CSD23203WT - Texas Instruments
Texas Instruments
CSD23203W CSD23203W 8 V P-Channel NexFET? Power MOSFET
CSD23203WT
Specs
Polarity P-Channel
V(BR)DSS -8 volts
rDS(on) 0.0194 ohms
View Details
6 suppliers
Advanced Linear Devices, Inc.
MOSFET
ALD310502SAL
View Details