AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM40P55D

Description
40V 50A 8.9mΩ@10V,16A 55W 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS
Description
40V 50A 8.9mΩ@10V,16A 55W 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - AGM40P55D - ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM40P55D
Transistors AGM40P55D
40V 50A 8.9mΩ@10V,16A 55W 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS

40V 50A 8.9mΩ@10V,16A 55W 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM40P55D
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Fuji Electric Corp. of America
Specs
Transistor Type Bipolar RF
View Details
60 V, 310 mA N-channel Trench MOSFET - 2N7002PW,115 - Nexperia B.V.
Specs
Transistor Type MOSFET
Package Type SOT323; SOT323 SOT323
View Details
9 suppliers
Silicon Carbide MOSFET Discretes - AIMW120R045M1 - Infineon Technologies AG
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
920A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E920 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details