AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM40P55D

Description
40V 50A 8.9mΩ@10V,16A 55W 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS
Description
40V 50A 8.9mΩ@10V,16A 55W 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - AGM40P55D - ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM40P55D
Transistors AGM40P55D
40V 50A 8.9mΩ@10V,16A 55W 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS

40V 50A 8.9mΩ@10V,16A 55W 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM40P55D
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

NPN/PNP general purpose transistor - BC817DPN-QX - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT457 SOT457
View Details
2 suppliers
IGBT Module - 158777848 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
Bipolar Transistors - 1220250 - RS Components, Ltd.
Specs
Transistor Type BJT
Polarity NPN
Package Type SOT223; Sot-223
View Details
 - 1EDN7512GXTMA1 - Rochester Electronics
Infineon Technologies AG
Specs
Transistor Type MOSFET
Package Type PG-WSON-6
View Details