AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM40P30AP

Description
40V 33A 59W 26Ω@10V,10A 1.6V@250uA 1 Piece P-Channel DFN3.3x3.3 MOSFETs ROHS
  • Transistors - AGM40P30AP - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
40V 33A 59W 26Ω@10V,10A 1.6V@250uA 1 Piece P-Channel DFN3.3x3.3 MOSFETs ROHS
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Transistors - AGM40P30AP - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM40P30AP
Transistors AGM40P30AP
40V 33A 59W 26Ω@10V,10A 1.6V@250uA 1 Piece P-Channel DFN3.3x3.3 MOSFETs ROHS

40V 33A 59W 26Ω@10V,10A 1.6V@250uA 1 Piece P-Channel DFN3.3x3.3 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM40P30AP
Product Name Transistors
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