AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM312AP

Description
30V 18A 9mΩ@10V,10A 3.6W 1.6V@250uA 1 N-Channel PDFN-8(3.3x3.3) MOSFETs ROHS
  • Transistors - AGM312AP - ODG (Origin Data Global)
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Description
30V 18A 9mΩ@10V,10A 3.6W 1.6V@250uA 1 N-Channel PDFN-8(3.3x3.3) MOSFETs ROHS
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Transistors - AGM312AP - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM312AP
Transistors AGM312AP
30V 18A 9mΩ@10V,10A 3.6W 1.6V@250uA 1 N-Channel PDFN-8(3.3x3.3) MOSFETs ROHS

30V 18A 9mΩ@10V,10A 3.6W 1.6V@250uA 1 N-Channel PDFN-8(3.3x3.3) MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM312AP
Product Name Transistors
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