AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM30P25AP

Name: Transistors
Brand: AGMSEMI Core Control Source Electronic Technology Co., Ltd.

Description

30V 10A 28W 20mΩ@10V,5A 1.5V@250uA 1 Piece P-Channel PDFN-8(3.3x3.3) MOSFETs ROHS

Description

30V 10A 28W 20mΩ@10V,5A 1.5V@250uA 1 Piece P-Channel PDFN-8(3.3x3.3) MOSFETs ROHS

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Company

Product

Description

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Shenzhen, China

Transistors
AGM30P25AP

Transistors AGM30P25AP

30V 10A 28W 20mΩ@10V,5A 1.5V@250uA 1 Piece P-Channel PDFN-8(3.3x3.3) MOSFETs ROHS

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JiuJiang Ingiant Technology Co., Ltd.

Fuji Electric Corp. of America

Qorvo

Specs

Transistor Technology / Material DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor

Package Type NI-360

Transistor Grade / Operating Range Military

2 suppliers

Texas Instruments

Specs

Transistor Type Power-MOSFET

Polarity N-Channel

Package Type SON5x6 Dual Cool

6 suppliers