AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM30P110D

Description
30V 138A 2.9mΩ@10V,20A 138W 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS
  • Transistors - AGM30P110D - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
30V 138A 2.9mΩ@10V,20A 138W 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Transistors - AGM30P110D - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM30P110D
Transistors AGM30P110D
30V 138A 2.9mΩ@10V,20A 138W 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS

30V 138A 2.9mΩ@10V,20A 138W 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
AGM30P110D
Triode/MOS Tube/Transistor >> MOSFETs AGM30P110D
30V 138A 2.9mΩ@10V,20A 138W 1.6V@250uA P Channel TO-252 MOSFETs ROHS

30V 138A 2.9mΩ@10V,20A 138W 1.6V@250uA P Channel TO-252 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number AGM30P110D AGM30P110D
Product Name Transistors Triode/MOS Tube/Transistor >> MOSFETs
Polarity P-Channel
V(BR)DSS 30 volts
VGS(off) 1.6 volts
rDS(on) 0.0029 ohms
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