AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM30P10AP

Description
30V 50A 9.6mΩ@10V,10A 3.5W 2.1V@250uA 1 Piece P-Channel DFN(3.3x3.3) MOSFETs ROHS
  • Transistors - AGM30P10AP - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
30V 50A 9.6mΩ@10V,10A 3.5W 2.1V@250uA 1 Piece P-Channel DFN(3.3x3.3) MOSFETs ROHS
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Suppliers

Company
Product
Description
Supplier Links
Transistors - AGM30P10AP - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM30P10AP
Transistors AGM30P10AP
30V 50A 9.6mΩ@10V,10A 3.5W 2.1V@250uA 1 Piece P-Channel DFN(3.3x3.3) MOSFETs ROHS

30V 50A 9.6mΩ@10V,10A 3.5W 2.1V@250uA 1 Piece P-Channel DFN(3.3x3.3) MOSFETs ROHS

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
AGM30P10AP
Triode/MOS Tube/Transistor >> MOSFETs AGM30P10AP
30V 23A 11mΩ@-10V,-20A 37W 2.1V@250uA P Channel DFN(3.3x3.3) MOSFETs ROHS

30V 23A 11mΩ@-10V,-20A 37W 2.1V@250uA P Channel DFN(3.3x3.3) MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number AGM30P10AP AGM30P10AP
Product Name Transistors Triode/MOS Tube/Transistor >> MOSFETs
Polarity P-Channel
V(BR)DSS 30 volts
VGS(off) 2.1 volts
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