AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM30P10AP

Name: Transistors
Brand: AGMSEMI Core Control Source Electronic Technology Co., Ltd.

Description

30V 50A 9.6mΩ@10V,10A 3.5W 2.1V@250uA 1 Piece P-Channel DFN(3.3x3.3) MOSFETs ROHS

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Datasheet

Description

30V 50A 9.6mΩ@10V,10A 3.5W 2.1V@250uA 1 Piece P-Channel DFN(3.3x3.3) MOSFETs ROHS

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Datasheet

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Product

Description

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Shenzhen, China

Transistors
AGM30P10AP

Transistors AGM30P10AP

30V 50A 9.6mΩ@10V,10A 3.5W 2.1V@250uA 1 Piece P-Channel DFN(3.3x3.3) MOSFETs ROHS

Supplier's Site

Futian, Shenzhen, China

Triode/MOS Tube/Transistor >> MOSFETs
AGM30P10AP

Triode/MOS Tube/Transistor >> MOSFETs AGM30P10AP

30V 23A 11mΩ@-10V,-20A 37W 2.1V@250uA P Channel DFN(3.3x3.3) MOSFETs ROHS

Supplier's Site

Datasheet

	ODG (Origin Data Global)	LCSC Electronics Technology (HK) Limited
Product Category	Transistors	Metal-Oxide Semiconductor FET (MOSFET)
Product Number	AGM30P10AP	AGM30P10AP
Product Name	Transistors	Triode/MOS Tube/Transistor >> MOSFETs
Polarity		P-Channel
V_(BR)DSS		30 volts
V_GS(off)		2.1 volts