AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM307MNQ

Description
30V 42A 21W 7.5mΩ@10V,20A 1.7V@250uA 2 N-Channel WQFN5x6 MOSFETs ROHS
Request a Quote
Description
30V 42A 21W 7.5mΩ@10V,20A 1.7V@250uA 2 N-Channel WQFN5x6 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - AGM307MNQ - ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM307MNQ
Transistors AGM307MNQ
30V 42A 21W 7.5mΩ@10V,20A 1.7V@250uA 2 N-Channel WQFN5x6 MOSFETs ROHS

30V 42A 21W 7.5mΩ@10V,20A 1.7V@250uA 2 N-Channel WQFN5x6 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM307MNQ
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

 - BC807-16LWX - Rochester Electronics
Specs
Polarity PNP
Package Type SOT323
View Details
6 suppliers
PMIC - PMIC - Gate Drivers - LM5111-1MYX/NOPB - 142033-LM5111-1MYX/NOPB - Win Source Electronics
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOT3; 8-MSOP-PowerPad
View Details
650A Igbt Module For One Phase 400/480V - SK-H1-QOUT-D650 - Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
Fuji Electric Corp. of America
Specs
Transistor Type Bipolar RF
View Details