AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM306AP

Description
30V 46A 20W 5.7mΩ@10V,20A 2.2V@250uA 1 N-Channel DFN(3.3x3.3) MOSFETs ROHS
  • Transistors - AGM306AP - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 46A 20W 5.7mΩ@10V,20A 2.2V@250uA 1 N-Channel DFN(3.3x3.3) MOSFETs ROHS

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Transistors - AGM306AP - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM306AP
Transistors AGM306AP
30V 46A 20W 5.7mΩ@10V,20A 2.2V@250uA 1 N-Channel DFN(3.3x3.3) MOSFETs ROHS

30V 46A 20W 5.7mΩ@10V,20A 2.2V@250uA 1 N-Channel DFN(3.3x3.3) MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM306AP
Product Name Transistors
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