AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM306AP

Description
30V 46A 20W 5.7mΩ@10V,20A 2.2V@250uA 1 N-Channel DFN(3.3x3.3) MOSFETs ROHS
Description
30V 46A 20W 5.7mΩ@10V,20A 2.2V@250uA 1 N-Channel DFN(3.3x3.3) MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - AGM306AP - ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM306AP
Transistors AGM306AP
30V 46A 20W 5.7mΩ@10V,20A 2.2V@250uA 1 N-Channel DFN(3.3x3.3) MOSFETs ROHS

30V 46A 20W 5.7mΩ@10V,20A 2.2V@250uA 1 N-Channel DFN(3.3x3.3) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM306AP
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Transistor - 200240527 - Radwell International
Fuji Electric Corp. of America
View Details
80 V, 1 A NPN medium power transistors - BC56PA-QX - Nexperia B.V.
Specs
Package Type SOT1061 SOT1061
View Details
3 suppliers
 - 2ED21091S06FXUMA1 - Rochester Electronics
Infineon Technologies AG
Specs
Transistor Type MOSFET; IGBT
Package Type SO-8; PG-DSO-8
View Details
Transistor - 21974632 - Radwell International
Allen-Bradley / Rockwell Automation
View Details