AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM12N10D

Description
100V 55A 83W 9.5mΩ@10V,20A 1.8V@250uA 1 N-Channel TO-252 MOSFETs ROHS
Description
100V 55A 83W 9.5mΩ@10V,20A 1.8V@250uA 1 N-Channel TO-252 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - AGM12N10D - ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM12N10D
Transistors AGM12N10D
100V 55A 83W 9.5mΩ@10V,20A 1.8V@250uA 1 N-Channel TO-252 MOSFETs ROHS

100V 55A 83W 9.5mΩ@10V,20A 1.8V@250uA 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM12N10D
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

80 V, 500 mA NPN general-purpose transistors - BC816-25HVL - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT23; SOT23 SOT23
Transistor Grade / Operating Range Automotive
View Details
5 suppliers
Transistor - 19352060 - Radwell International
Fuji Electric Corp. of America
View Details
Bipolar Transistors - 1219933 - RS Components, Ltd.
Specs
Transistor Type BJT
Polarity NPN
Package Type SOT23; Sot-23
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R020M1 - AIMBG120R020M1 - Infineon Technologies AG
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details