AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM12N10AP

Description
100V 55A 9.3mΩ@10V,20A 83W 1.8V@250uA 1 N-Channel PDFN3.3x3.3 MOSFETs ROHS
  • Transistors - AGM12N10AP - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
100V 55A 9.3mΩ@10V,20A 83W 1.8V@250uA 1 N-Channel PDFN3.3x3.3 MOSFETs ROHS

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Transistors - AGM12N10AP - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM12N10AP
Transistors AGM12N10AP
100V 55A 9.3mΩ@10V,20A 83W 1.8V@250uA 1 N-Channel PDFN3.3x3.3 MOSFETs ROHS

100V 55A 9.3mΩ@10V,20A 83W 1.8V@250uA 1 N-Channel PDFN3.3x3.3 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM12N10AP
Product Name Transistors
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