AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM056N10H

Description
100V 140A 227W 5.1mΩ@10V,40A 2.8V@250uA 1 N-Channel TO-263 MOSFETs ROHS
  • Transistors - AGM056N10H - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
100V 140A 227W 5.1mΩ@10V,40A 2.8V@250uA 1 N-Channel TO-263 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - AGM056N10H - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM056N10H
Transistors AGM056N10H
100V 140A 227W 5.1mΩ@10V,40A 2.8V@250uA 1 N-Channel TO-263 MOSFETs ROHS

100V 140A 227W 5.1mΩ@10V,40A 2.8V@250uA 1 N-Channel TO-263 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM056N10H
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SA1624E-AA - 855050-2SA1624E-AA - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1624E-AA
2SA1624E-AA
Specs
Package Type SOT3
View Details
IGBT - 192352301 - Radwell International
Fuji Electric Corp. of America
IGBT
2MBI200L-060
Specs
Transistor Type IGBT
View Details
- 2ED2742S01GXTMA1 - Rochester Electronics
Infineon Technologies AG
2ED2742S01GXTMA1
Specs
Transistor Type MOSFET
Package Type PG-VSON-1
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details