AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM056N10A

Description
100V 100A 4.7mΩ@10V,20A 113W 2.5V@250uA 1 N-Channel DFN(5x6) MOSFETs ROHS
  • Transistors - AGM056N10A - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
100V 100A 4.7mΩ@10V,20A 113W 2.5V@250uA 1 N-Channel DFN(5x6) MOSFETs ROHS
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Transistors - AGM056N10A - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM056N10A
Transistors AGM056N10A
100V 100A 4.7mΩ@10V,20A 113W 2.5V@250uA 1 N-Channel DFN(5x6) MOSFETs ROHS

100V 100A 4.7mΩ@10V,20A 113W 2.5V@250uA 1 N-Channel DFN(5x6) MOSFETs ROHS

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
AGM056N10A
Triode/MOS Tube/Transistor >> MOSFETs AGM056N10A
100V 100A 4.7mΩ@10V,20A 123W 2.5V@250uA N Channel DFN(5x6) MOSFETs ROHS

100V 100A 4.7mΩ@10V,20A 123W 2.5V@250uA N Channel DFN(5x6) MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number AGM056N10A AGM056N10A
Product Name Transistors Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel
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