AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM028N08A

Description
85V 170A 167W 2.8mΩ@10V,15A 3V@250uA 1 N-Channel PDFN5x6 MOSFETs ROHS
Datasheet
Description
85V 170A 167W 2.8mΩ@10V,15A 3V@250uA 1 N-Channel PDFN5x6 MOSFETs ROHS
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistors - AGM028N08A - ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM028N08A
Transistors AGM028N08A
85V 170A 167W 2.8mΩ@10V,15A 3V@250uA 1 N-Channel PDFN5x6 MOSFETs ROHS

85V 170A 167W 2.8mΩ@10V,15A 3V@250uA 1 N-Channel PDFN5x6 MOSFETs ROHS

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
AGM028N08A
Triode/MOS Tube/Transistor >> MOSFETs AGM028N08A
85V 170A 167W 2.8mΩ@10V,15A 3V@250uA null PDFN5x6 MOSFETs ROHS

85V 170A 167W 2.8mΩ@10V,15A 3V@250uA null PDFN5x6 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number AGM028N08A AGM028N08A
Product Name Transistors Triode/MOS Tube/Transistor >> MOSFETs
V(BR)DSS 85 volts
Unlock Full Specs
to access all available technical data

Similar Products

Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R016M2H - AIMDQ75R016M2H - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
TJ -55 to 175 C (-67 to 347 F)
View Details
20 V, N-channel Trench MOSFET - BUK4D16-20H - Nexperia B.V.
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS 20 volts
IDSS 26000 milliamps
View Details
2 suppliers
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ALD210814SCL - Shenzhen Shengyu Electronics Technology Limited
Specs
V(BR)DSS 10.6 volts
IDSS 80 milliamps
Packing Method Tube; Tube
View Details
Specs
V(BR)DSS 60 volts
IDSS 11000 to 54000 milliamps
Package Type 8-PowerTDFN
View Details