The ASI TH430 is an NPN silicon RF power transistor designed for SSB and VHF communications, featuring emitter ballasting for improved ruggedness. It is packaged in a 4-lead flanged style with a thermal resistance of 0.40 °C/W. The device has a collector-emitter breakdown voltage of 55 V, a collector-base voltage of 110 V, and a maximum power dissipation of 330 W at 25 °C. It delivers a minimum power gain of 14.5 dB at 30 MHz with 220 W output, and exhibits a maximum third-order intermodulation distortion of -30 dBc. The junction temperature ranges from -65 °C to +200 °C, and the storage temperature from -65 °C to +150 °C. The transistor uses the Omnigold™ metalization system.
RF Bipolar Transistors RF Transistor
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | TH430 |
| Product Name | RF Bipolar Transistors |
