Advanced Semiconductor, Inc. RF Bipolar Transistors SD1407

Description
RF Bipolar Transistors RF Transistor
Description
RF Bipolar Transistors RF Transistor
Datasheet
Datasheet Summary
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The SD1407 is an NPN silicon RF power transistor designed for broadband amplifier operations up to 30 MHz in a 4-lead flange package measuring 0.980 by 0.505 inches. It has a maximum collector current of 20 A, collector-emitter voltage of 36 V, and power dissipation of 270 W at 25 °C case temperature. The transistor delivers a minimum power gain of 15 dB at 125 W PEP and achieves intermodulation distortion of -30 dBc maximum at 30 MHz. Thermal resistance from junction to case is 0.65 °C/W. The junction temperature range is -65 °C to +200 °C and the storage temperature range is -65 °C to +150 °C. The device features an Omnigold™ metalization system.

Datasheet Summary
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The SD1407 is an NPN silicon RF power transistor designed for broadband amplifier operations up to 30 MHz in a 4-lead flange package measuring 0.980 by 0.505 inches. It has a maximum collector current of 20 A, collector-emitter voltage of 36 V, and power dissipation of 270 W at 25 °C case temperature. The transistor delivers a minimum power gain of 15 dB at 125 W PEP and achieves intermodulation distortion of -30 dBc maximum at 30 MHz. Thermal resistance from junction to case is 0.65 °C/W. The junction temperature range is -65 °C to +200 °C and the storage temperature range is -65 °C to +150 °C. The device features an Omnigold™ metalization system.

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Sheung Wan, Hong Kong
RF Bipolar Transistors
SD1407
RF Bipolar Transistors SD1407
RF Bipolar Transistors RF Transistor

RF Bipolar Transistors RF Transistor

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number SD1407
Product Name RF Bipolar Transistors
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