Advanced Semiconductor, Inc. RF Bipolar Transistors MRF587

The MRF587 is an NPN silicon RF power transistor designed for high-linearity power amplifier applications up to 500 MHz. It is packaged in a 4-lead stud mount style with dimensions of 1.010 to 1.055 inches in length, 0.220 to 0.230 inches in width, and 0.270 to 0.285 inches in height. The device has acollector-to-base breakdown voltage of 34 V, collector-to-emitter voltage of 17 V, and emitter-to-base voltage of 2.5 V. Power dissipation is rated at 5.0 W at 25 °C, with junction and storage temperatures ranging from -65 °C to +200 °C and -65 °C to +150 °C respectively. Typical power gain is 16 dB at 220 W and 500 MHz, with a collector current of 200 mA.