The MRF151G is a dual common source N-channel enhancement-mode MOSFET RF power transistor designed for 175 MHz, 300 W transmitter and amplifier applications. It is packaged in a .385 x .850 inch 4-lead FG style with pins 1 and 2 as drain, 3 and 4 as gate, and 5 as source. The device has a maximum drain-source voltage of 125 V, continuous drain current of 40 A, and power dissipation of 500 W at 25℃. Thermal resistance from junction to case is 0.35 °C/W. Operating junction temperature ranges from -65℃ to +200℃. Gain is 14 to 16 dB at 175 MHz with 300 W output power, and efficiency is 50% to 55%. The device exhibits no degradation in output power under a 5:1 VSWR at all phase angles.
RF MOSFET Transistors RF Transistor
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | MRF151G |
| Product Name | RF MOSFET Transistors |
