The AP2307GN-HF-3 is a P-channel enhancement-mode MOSFET in the SOT-23 surface-mount package, designed for medium current applications such as load switches and DC-DC converters. It features a drain-source voltage rating of -16 V, a continuous drain current of -4 A at 25°C, and a maximum on-resistance of 60 mΩ at -4.5 V gate-source voltage. The device has a total power dissipation of 1.38 W at 25°C and a maximum junction temperature of 150°C. Thermal resistance from junction to ambient is 90 °C/W. It is RoHS-compliant and halogen-free. The SOT-23 package has dimensions of 2.70 to 3.10 mm in length, 2.20 to 3.00 mm in width, and 0.88 to 1.30 mm in height.
MOSFET Transistor, P Channel, -4 A, -16 V, 0.06 ohm, -4.5 V RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 88W4704 |
| Product Name | Mosfet Transistor, P Channel, -4 A, -16 V, 0.06 Ohm, -4.5 V Rohs Compliant Advanced Power Electronics Corp |
| Polarity | P-Channel |