Advanced Power Electronics Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - AP2306AGN-HF-3TR AP2306AGN-HF-3TR

Description
Manufacturer: Advanced Power Electronics Corp. Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 967098-AP2306AGN-HF- 3TR Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Power Dissipation: 1.38 W Height: 1.4 mm Number of Channels: 1 Number of Pins: 3 Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-23 Popularity: Low Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C REACH SVHC: Unknown Max Power Dissipation: 1.38 W Turn-On Delay Time: 5 ns Max Junction Temperature (Tj): 150 °C Continuous Drain Current (ID): 5 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 20 ns Drain to Source Resistance: 35 mΩ Gate to Source Voltage (Vgs): 8 V
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Description
Manufacturer: Advanced Power Electronics Corp. Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 967098-AP2306AGN-HF- 3TR Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Power Dissipation: 1.38 W Height: 1.4 mm Number of Channels: 1 Number of Pins: 3 Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-23 Popularity: Low Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C REACH SVHC: Unknown Max Power Dissipation: 1.38 W Turn-On Delay Time: 5 ns Max Junction Temperature (Tj): 150 °C Continuous Drain Current (ID): 5 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 20 ns Drain to Source Resistance: 35 mΩ Gate to Source Voltage (Vgs): 8 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - AP2306AGN-HF-3TR - 967098-AP2306AGN-HF-3TR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AP2306AGN-HF-3TR
967098-AP2306AGN-HF-3TR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AP2306AGN-HF-3TR 967098-AP2306AGN-HF-3TR
Manufacturer: Advanced Power Electronics Corp. Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 967098-AP2306AGN-HF- 3TR Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Power Dissipation: 1.38 W Height: 1.4 mm Number of Channels: 1 Number of Pins: 3 Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-23 Popularity: Low Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C REACH SVHC: Unknown Max Power Dissipation: 1.38 W Turn-On Delay Time: 5 ns Max Junction Temperature (Tj): 150 °C Continuous Drain Current (ID): 5 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 20 ns Drain to Source Resistance: 35 mΩ Gate to Source Voltage (Vgs): 8 V

Manufacturer: Advanced Power Electronics Corp.
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 967098-AP2306AGN-HF-3TR
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 30 V
Power Dissipation: 1.38 W
Height: 1.4 mm
Number of Channels: 1
Number of Pins: 3
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SOT-23
Popularity: Low
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Compliant
Min Operating Temperature: -55 °C
REACH SVHC: Unknown
Max Power Dissipation: 1.38 W
Turn-On Delay Time: 5 ns
Max Junction Temperature (Tj): 150 °C
Continuous Drain Current (ID): 5 A
Drain to Source Breakdown Voltage: 30 V
Turn-Off Delay Time: 20 ns
Drain to Source Resistance: 35 mΩ
Gate to Source Voltage (Vgs): 8 V

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Technical Specifications

  Win Source Electronics
Product Category RF Transistors
Product Number 967098-AP2306AGN-HF-3TR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - AP2306AGN-HF-3TR
Package Type SOT3; SOT23; SOT-23
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