The ALD212908PAL is an 8-pin plastic dual-in-line package (PDIP) containing a precision matched dual N-channel EPAD™ MOSFET array designed for low-voltage, low-power analog applications. It features a precise gate threshold voltage of +0.80V ±0.01V, a maximum drain-source voltage of 10V, and an on-state drain current of 85μA at VGS=+0.9V and VDS=+0.1V. The device operates with sub-threshold currents below 1nA and exhibits a drain-source on-resistance of 14Ω at VGS=+5.8V. It supports operation from 0°C to +70°C and has a power dissipation rating of 500mW. The matched pair exhibits a threshold voltage offset of up to 10mV and a temperature coefficient of −1.7mV/°C for gate threshold voltage. Input capacitance is 30pF and gate leakage is 200pA maximum at 25°C.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP
MOSFET 2N-CH 10.6V 0.08A 8DIP
MOSFET Dual N-Ch Matched Pr VGS=0.0V
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | ALD212908PAL | ALD212908PAL-ND | ALD212908PAL | ALD212908PAL |
| Product Name | PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE MATCHED PAIR | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | |||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | |||
| V(BR)DSS | 10 volts | |||
| IDSS | 79 milliamps |
