The ALD212908ASAL is a dual precision enhancement mode N-channel EPAD® MOSFET array in an 8-pin SOIC package, designed for ultra-low-voltage analog applications. It features a tightly matched gate threshold voltage of +0.80V ±0.01V, with a typical offset of 1mV and a temperature coefficient of -1.7 mV/°C. It operates from +0.05V to +10V with sub-threshold currents below 1nA and delivers output currents exceeding 50mA. The device has a low RDS(ON) of 14Ω at VGS = +5.8V, high input impedance of 2.5 × 10¹⁰Ω, and fast switching with 10ns delays. The SOIC package measures 5.00mm × 4.05mm × 1.75mm. It supports nanopower circuits, current mirrors, and differential amplifiers, and is RoHS compliant.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Surface Mount 8-SOIC
MOSFET 2N-CH 10.6V 0.08A 8SOIC
MOSFET Dual N-Ch Matched Pr VGS=0.0V
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | ALD212908ASAL | ALD212908ASAL-ND | ALD212908ASAL | ALD212908ASAL |
| Product Name | PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE MATCHED PAIR | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | |||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | |||
| V(BR)DSS | 10 volts | |||
| IDSS | 79 milliamps |
