The ALD212908APAL is an 8-pin plastic DIP package dual precision enhancement mode N-channel EPAD® MOSFET array with a gate threshold voltage of +0.80V ±0.01V and a VGS(th) mismatch of ≤2mV. It operates at supply voltages as low as 0.1V, supports subthreshold operation with <1nA current, and features a drain-source on-resistance of 14Ω at VGS=5.8V and output current capability exceeding 50mA. The device exhibits matched temperature coefficients, low input capacitance of 30pF, and operates within a 0°C to +70°C temperature range. It meets RoHS standards with a lead-free finish.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP
MOSFET 2N-CH 10.6V 0.08A 8DIP
MOSFET Dual N-Ch Matched Pr VGS=0.0V
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | ALD212908APAL | ALD212908APAL-ND | ALD212908APAL | ALD212908APAL |
| Product Name | PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE MATCHED PAIR | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | |||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | |||
| V(BR)DSS | 10 volts | |||
| IDSS | 79 milliamps |
